High-Voltage N-Channel MOSFET LSB65R041GF

High-Voltage N-Channel MOSFET LSB65R041GF   Description LonFETTM Power MOSFET (Superjunction MOSFET)  is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency.   Features  Ultra low RDS(on)  Ultra low gate charge (typ. Qg= 169nC)  100% UIS tested  RoHS compliant   Applications  Power factor correction (PFC).  Switched mode power supplies (SMPS).  Uninterruptible power supply (UPS).   Absolute Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 650 V Continuous drain current   ( TC  = 25°C ) ( TC = 100°C ) ID 78 49.3 A A Pulsed drain current 1) IDM 234 A Gate-Source voltage VGSS ±30 V Avalanche energy, single pulse 2) EAS 1626 mJ Power Dissipation PD 658 W MOSFET dv/dt Ruggedness, VDS ≤480V dv/dt 80 V/ns Re…

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