300V N-Channel Power MOSFET PTW50N30

300V N-Channel MOSFET Power MOSFET For UPS -- PTW50N30   General Features  Proprietary New Planar Technology  RDS(ON),typ.=68mΩ@VGS=10V  Low Gate Charge Minimize Switching Loss  Body Diode with Fast Recovery Characteristics   Applications  DC-DC Converters  DC-AC Inverters for UPS  SMPS and Motor controls   Absolute Maximum Ratings Symbol Parameter PTW50N30 Unit VDSS Drain-to-Source Voltage[ 1] 300 V VGSS Gate-to-Source Voltage ±20 ID Continuous Drain Current 50   A ID @ Tc =100℃ Continuous Drain Current @ Tc= 100℃ 31 IDM Pulsed Drain Current at VGS= 10V[2] 200 EAS Single Pulse Avalanche Energy 3044 mJ dv/dt Peak Diode Recovery dv/dt[3] 5.0 V/ns PD Power Dissipation 305 W Derating Factor above 25℃ 2.50 W/℃ TL TPAK Maximum Temperature for Soldering Leads at 0.063in ( 1.6mm) from Case for  10 seconds,  Package Body for 10 seconds 300 260   ℃ TJ& TSTG Operating…

Fast Recovery Diode IGBT Single Tube Power MOSFET Intelligent Power Modules(IPM)