1500V N-ch High Planar MOSFET PTH03N150

1500V N-ch High Planar MOSFET Power MOSFET -- PTH03N150   General Features  RoHS Compliant  RDS(ON),typ.=5.4 Ω@VGS=10V  Low Gate Charge Minimize Switching Loss  Fast Recovery Body Diode   Applications  Adaptor  Charger  SMPS Standby Power     Absolute Maximum Ratings Symbol Parameter PTH03N150 PTA03N150 Unit VDSS Drain-to-Source Voltage 1500   V VGSS Gate-to-Source Voltage ±30 ID Continuous Drain Current 3   A IDM Pulsed Drain Current at VGS= 10V 12 EAS Single Pulse Avalanche Energy,L=30mH 500 mJ   PD Power Dissipation 90 35 W Derating Factor above 25℃ 0.72 0.28 W/℃ TL Soldering Temperature Distance of 1.6mm from case for 10 seconds 300   ℃ TJ& TSTG Operating and Storage Temperature Range -55 to 150   * The MOSFET, a Metal-Oxide-Semiconductor Field-Effect Transistor, is classified as a voltage-controlled semiconductor device within the broader category of elect…

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