250V N-Channel MOSFET PTW50N25

N-Channel MOSFET Power MOSFET 250V 50A  PTW50N25   General Features  Proprietary New Planar Technology  RDS(ON),typ.=45mΩ@VGS=10V  Low Gate Charge Minimize Switching Loss  Fast Recovery Body Diode   Applications  DC-DC Power Converters  DC-AC Inverters for Uninterruptible Power Supply (UPS)   Switch-Mode Power Supplies (SMPS) and Motor Drives   Absolute Maximum Ratings Symbol Parameter Rating Unit VDSS Drain-to-Source Voltage[ 1] 250 V VGSS Gate-to-Source Voltage ±20 ID Continuous Drain Current 50   A ID @ Tc =100℃ Continuous Drain Current @ Tc= 100℃ 25 IDM Pulsed Drain Current at VGS= 10V[2] 200 EAS Single Pulse Avalanche Energy 1250 mJ dv/dt Peak Diode Recovery dv/dt[3] 5.0 V/ns PD Power Dissipation 278 W Derating Factor above 25℃ 1.0 W/℃ TL TPAK Maximum Temperature for Soldering Leads at 0.063in ( 1.6mm) from Case for  10 seconds, Package Body for 10 seconds 300 260…

Fast Recovery Diode IGBT Single Tube Power MOSFET Intelligent Power Modules(IPM)