High Voltage N-channel Power MOSFET LSD65R380GF

650V N-Channel MOSFET Power MOSFET 11A, 650V, 0.38Ω --LSD65R380GF   Product Summary VDS @ Tj,max : 700V RDS(on),max :  0.38Ω IDM :                    33A Qg,typ :              21nC    Description This Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency.   Features ⚫ Ultra low RDS(on) ⚫ Ultra low gate charge (typ. Qg= 21nC) ⚫ 100% UIS tested ⚫ RoHS compliant   Applications ⚫ Power factor correction (PFC). ⚫ Switched mode power supplies (SMPS). ⚫ Uninterruptible power supply (UPS).     Absolute Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 650 V Continuous drain current 1)                ( TC  = 25°C ) ( TC = 100°C ) ID   11 7   A A Pulsed drain current 2) IDM 33 A Gate-Source voltage VGSS ±30 V Avalanche energy, si…

Fast Recovery Diode IGBT Single Tube Power MOSFET Intelligent Power Modules(IPM)