1200V N-Channel MOSFET PTF12N120 High Power Transistor

1200V N-Channel MOSFET Power MOSFET -- PTF12N120   Key Features Fast Switching Capability Typical RDS(ON) = 1.2Ω @ VGS=10V Low Gate Charge for Reduced Switching Losses Body Diode with Fast Recovery Characteristics   Typical Applications AC Adapters Battery Chargers Standby Power Supplies in SMPS (Switched-Mode Power Supplies)       Absolute Maximum Ratings Symbol Parameter Maximum Rating Unit VDSS Drain-to-Source Voltage 1200 V VGSS Gate-to-Source Voltage ±30 ID Continuous Drain Current 12   A Continuous Drain Current @ Tc=100℃ 7 IDM Pulsed Drain Current at VGS=10V[2,4] 48 EAS Single Pulse Avalanche Energy 700 mJ dv/dt Peak Diode Recovery dv/dt[3] 5.0 V/ns PD Power Dissipation 380 W Derating Factor above 25℃ 3.04 W/℃ TL TPAK Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for  10 seconds, Package Body for 10 seconds 300 260   ℃ TJ& TSTG O…

Fast Recovery Diode IGBT Single Tube Power MOSFET Intelligent Power Modules(IPM)