NCE30TH60BPN 600V 30A Trench FS II Fast IGBT

Semiconductor Discrete Devices -- IGBT Single Tube   General Description: Engineered with NCE’s proprietary Trench-Gate Field Stop (TFS) architecture and second-generation Field Stop (FS II) technology, the 600V Trench FS II IGBT series delivers industry-leading conduction efficiency, ultra-fast switching performance, and simplified parallel configuration for high-power applications.   Key Features ⚫ Trench FSII Technology offering ⚫ Ultra-low on-state voltage (VCE(sat) typ. 1.2V) ⚫ High-frequency switching capability (fSW up to 100kHz) ⚫ Positive temperature coefficient in VCE(sat) ⚫ Tight parameter distribution for enhanced module design ⚫ Rugged avalanche performance with temperature-compensated switching behavior   Typical Application ⚫ Air Condition ⚫ Inverters ⚫ Motor drives     IGBT Single Tube (or Discrete IGBT)A power semiconductor device that packages a single IGBT chip (often with a freewheeling diode) in an isolated housing. Key characteristics: Contains only…

Fast Recovery Diode IGBT Single Tube Power MOSFET E-beam Welding Alloy Resistor Intelligent Power Modules(IPM)