High Voltage IGBT DXG15S120H 1200V

Semiconductor Discrete Devices -- IGBT Single Tube   Features  1200V15A,VCE(sat)(typ.) = 1.9 V@15A  SPT(Soft Punch Through) technology  Lower losses  Higher system efficiency  Excellent short-circuit capability  Square RBSOA   General Description IGBTs offer lower losses and higher energy for application such as motor drive ,UPS, inverter and other soft switching applications.     *IGBT Single Tube (or Discrete IGBT)A power semiconductor device that packages a single IGBT chip (often with a freewheeling diode) in an isolated housing. Key characteristics: Contains only one IGBT unit without internal drivers; Requires external gate drivers, heat sinks, and protection circuits; Standardized packages (e.g., TO-247, TO-220) for design flexibility.

Fast Recovery Diode IGBT Single Tube Power MOSFET E-beam Welding Alloy Resistor Intelligent Power Modules(IPM)