650V 40A IGBT Transistor DXG40N65HSEK

Semiconductor Discrete Devices -- IGBT Single Tube 650V 40A  IGBT DXG40N65HSEK   Features  650V 40A,VCE(sat)(typ.) = 1.70 V@40A  Field Stop IGBT Technology.  10μs Short Circuit Capability.  Square RBSOA.  Positive VCE (on) Temperature Coefficient.   Benefits  Enhanced Motor Control Efficiency    Rugged Performance.  Superior Current Sharing     *A Discrete IGBT (Insulated Gate Bipolar Transistor Single Tube) is a separately packaged semiconductor power switching device, belongs to the category of electronic components. It integrates an IGBT structure (typically with an anti-parallel freewheeling diode) on a single chip, housed in a standard discrete package (e.g., TO-247, TO-220) with three terminals (Gate, Collector, Emitter). Its core function is to act as a high-voltage, high-current, high-speed electronic switch, controlled by the gate voltage.

Fast Recovery Diode IGBT Single Tube Power MOSFET E-beam Welding Alloy Resistor Intelligent Power Modules(IPM)