650V 10A N-channel Power Transistors LND10N65

650V 10A N-Channel MOSFET Power MOSFET - LND10N65   Description The Power MOSFET is fabricated using the advanced planar VDMOS technology.The resulting device has low conduction resistance, superior switching performance and high avalanche energy. Features ⚫ Low RDS(on) ⚫ Low gate charge (typ. Qg =32.9nC) ⚫ 100% UIS tested ⚫ RoHS compliant   Application   ⚫ Power factor correction. ⚫ Switched mode power supplies. ⚫ LED driver.     Absolute Maximum Ratings   Parameter Symbol Value Unit Drain-Source Voltage VDSS 650 V Continuous drain current 1) ( TC = 25°C ) ( TC = 100°C ) ID 106.3 AA Pulsed drain current 2) IDM 40 A Gate-Source voltage VGSS ±30 V Avalanche energy, single pulse 3) EAS 500 mJ Power Dissipation PD 40 W Operating and Storage Temperature Range TJ, TSTG -55 ~150 °C Continuous diode forward current IS 10 A Diode pulse current IS,pulse 40 A   Notes: 1. Drain current limited by maximum junction temperature, TO-220 equivalent. 2. Repetitive R…

Fast Recovery Diode IGBT Single Tube Power MOSFET Intelligent Power Modules(IPM)