600V 30A NCE30TD60B IGBT Single Tube

Semiconductor Discrete Devices -- IGBT Single Tube   General Description Employing NCE's proprietary trench architecture and advanced second-generation Field Stop (FS II) technology, the 600V Trench FS II IGBT delivers exceptional conduction and switching performance while enabling effortless parallel operation.   Features  Trench FSII Technology offering  Extremely low VCE(sat)  High-speed switching capability  Positive temperature coefficient in VCE(sat)  Tightly controlled parameter distribution  Robust ruggedness with temperature-stable operation   Application  Air Condition systems  Inverters applications  Motor drive systems       *A Discrete IGBT (Insulated Gate Bipolar Transistor Single Tube) is a separately packaged semiconductor power switching device, belongs to the category of electronic components. It integrates an IGBT structure (typically with an anti-parallel freewheeling diode) on a single chip, housed in a standard discrete package (e.g., TO-247, TO-…

Fast Recovery Diode IGBT Single Tube Power MOSFET Intelligent Power Modules(IPM)