Semiconductor Discrete Devices -- IGBT Single Tube 600V 15A Trench FS II Fast IGBT NCE15TD60BD   General Description Leveraging NCE’s proprietary trench architecture and second-generation Field Stop (FS) technology, the 600V Trench FSII IGBT delivers exceptional conduction and switching performance, along with simplified parallel operation capabilities.   Features  Trench FSII Technology offering  Ultra-low VCE(sat) (saturation voltage)  Rapid switching capability  Positive temperature coefficient in VCE(sat)  Tightly controlled parameter distribution  High ruggedness, temperature stable behavior   Application  Air condition  Inverter systems  Motor drive applications     IGBT Single Tube (or Discrete IGBT)A power semiconductor device that packages a single IGBT chip (often with a freewheeling diode) in an isolated housing.

Similar

300V N-Channel Power MOSFET PTW50N30
250V N-Channel MOSFET PTW50N25
High-Performance Fast Recovery Epitaxial Diodes HUR30120
1500V N-ch High Planar MOSFET PTH03N150
600V 20A 3-Phase IPM Module SIM2-202B
1200V N-Channel MOSFET PTF12N120 High Power Transistor
High Voltage N-channel Power MOSFET LSD65R380GF
High Performance N-channel 650V 20A Power MOSFET LSD65R180GT
NCE30TH60BPN 600V 30A Trench FS II Fast IGBT
600V 30A NCE30TD60B IGBT Single Tube
High-Voltage N-Channel MOSFET LSB65R041GF
550V 23A N-channel Power MOSFET LSB55R140GF

Guangdong Kinwill Electronic Co., Ltd

      GuangDong KinWill Electronics Co., Ltd. is a high-tech company specializing in the sales of el…

Copyrights © 2025 aevictoryparts.com All Rights.Reserved .