BLC10G22XS-603AVT RF MOSFET LDMOS 30V

HF/VHF POWER LDMOS Part Number：BLC10G22XS-603AVT（suffix Z/Y: BLC10G22XS-603AVTY）   Manufacturer：Ampleon   Device Type：LDMOS, asymmetric Doherty power transistor, 2.11–2.17 GHz, 600 W peak power, dedicated for 5G NR/4G LTE macro base station RF final‑stage amplification.   Key Specifications (Tcase=25°C, VDS=30V, 5G NR/W‑CDMA signal)   Frequency Range：2.11 GHz ~ 2.17 GHz (5G mainstream bands such as n1/n3) Drain Supply Voltage (VDS)：30 V (Typ.), Max 65 V Quiescent Current (IDq)：1150 mA (Main amp, Typ.) Average Output Power (PL(AV))：110–118 W (50.4–50.7 dBm) Peak Output Power (PL(M))：600–650 W (Typ. 600 W) Power Gain (Gp)：15.4 dB (Typ.) Drain Efficiency (ηD)：47.5 % (Typ.) Adjacent Channel Power Ratio (ACPR)：−31 dBc (Typ., ≤−50 dBc after linearization) Input Return Loss (RLin)：−15 dB (Typ.) Package：SOT1258-4 (6-lead, earless flanged, air-cavity plastic) Thermal Resistance (Junction to Case)：0.17–0.19 K/W (at 110–140W power dissipation) Features：Internal pre-matching, lo…

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