BLC10G22XS-570AVT RF MOSFET LDMOS 30V SOT1258

Part Number：BLC10G22XS-570AVT   Manufacturer：Ampleon   Device Type：LDMOS, 30V asymmetric Doherty RF power transistor   Application：Final power amplifier for 4G/5G macro base station AAU & RRU, 2110～2180 MHz（n1/n3/B1/B3 bands）   Key Specifications（Tcase=25°C, VDS=30V, W-CDMA signal）   Frequency Range：2110 MHz ~ 2180 MHz Supply Voltage：30 V (Typ.), Max 65V Quiescent Current：1150mA (Main) Average Output Power：93.3 W (49.7dBm) Peak Output Power：570 W (Typ.) Power Gain：15.7 dB (Typ.) Drain Efficiency：48% (Typ.) ACPR：−34.2 dBc (Typ.) Input Return Loss：−14 dB (Typ.) Package：SOT1258-4, 6-lead earless flange air-cavity package Thermal Resistance (J-C)：0.18~0.20 K/W Ruggedness：10:1 VSWR full-phase load mismatch tolerance   Features   High Ruggedness LDMOS Technology: Excellent load mismatch tolerance for long-term stable base station operation; Integrated Asymmetric Doherty Architecture: Optimized for high-PAPR multi-carrier 5G NR and LTE signals with good linearity;…

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