B10G3438N55D B10G3438N55DZ RF MOSFET LDMOS

2-Stage Doherty MMIC Model: B10G3438N55D   Manufacturer: Ampleon   Product Type: 10th Generation 50V LDMOS 3-stage Fully Integrated Asymmetrical Doherty MMIC RF Power Amplifier, optimized for 3.4–3.8GHz band (covering 5G NR n78 core band and 4G TDD-LTE high-frequency band) small cell and massive MIMO applications, achieving perfect balance between high power, efficiency and linearity with advanced GEN10 LDMOS technologyAmpleon   Key Specifications Parameter Specification Frequency Range 3400 MHz ~ 3800 MHz (Precisely covers 5G NR n78 core band, compatible with 4G TDD-LTE 3.5GHz band) Output Power at 3dB Compression 47.4dBm (55W CW, at 50V supply, 3600MHz, pulsed CW measurement) Typical Power Gain 33.7 dB (at 50V supply, 47dBm output, 3600MHz, CW signal) Typical Drain Efficiency 37.3% (at PL=7.94W/39dBm, 1-carrier W-CDMA signal, PAR=7.2dB, 3600MHz) Saturated Drain Efficiency 42% (at PL=PL(3dB), 3600MHz) Supply Voltage 48V/50V nominal, Maximum Rated Drain-Source Brea…

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