N-type Half Cut PV Mono Wafers

N-type silicon wafers Minority carrier lifetime: ≥1,000us Resistivity: 0.3-2.1Ω.cm Carbon content: ≤0.5×1017 atoms/cm3 Oxygen content ≤6.0×1017 atoms/cm3   182 silicon wafers Dimension：182±0.25mm Doping mode: N-type phosphorus doped   210 silicon wafers Dimension：210±0.25mm Doping mode: N-type phosphorus doped   Customized silicon wafers   Material properties Item Specification Testing method Growth mode CZ / Crystal orientation ＜100＞±3° X-ray diffraction method Conductivity type N type P/N tester Dislocation density ≤500 X-ray diffractometer (ASTM F26-1987)   Electrical properties Item Specification Testing method Oxygen content ≤6.×1017atoms/cm3 Fourier transform infrared spectrometer Carbon content ≤0.5×1017atoms/cm3 Fourier transform infrared spectrometer Resistivity 0.3-2.1Ω.cm Resistivity: 0.3-2.1Ω.cm Automatic silicon wafer detection equipment Minority carrier lifetime ≥1000us Sinton BCT-400…

Half-sliced Silicon Wafers N-type Silicon Wafers