High Thermal Conductivity Aluminum Nitride Ceramic Wafer 

High Thermal Conductivity Aluminum Nitride Ceramic Wafer The specification of the AlN ceramic substrate 1. We are supplying with many round ceramic wafer, square & rectangular ceramic substrate 2. The typical thickness of wafer covers 0.38mm, 0.5mm, 0.635mm, 1.0mm, 1.2mm, 1.5mm 3. The biggest diameter of round ceramic wafer can be up to 400mm in 3mm, 4mm, 5mm thick 4. The max. side-length of square and rectangular ceramic wafer can be 400mm by 500mm 5. Surface treatment: it can be one-side, or double side polished, metalizing or sand blasting The main features of the AlN ceramic substrate 1. High thermal conductivity (170 ~220) W/m.k,  it's 5~8.5 times higher than that of alumina 2. Similar coefficient of thermal expansion to that of silicon (Si), it helps to achieve high reliability of Si chip 3. High insulation resistance and voltage resistance strength, but low dielectric constant and dielectric loss 4. High mechanical strength, it's up to 450MPa and…

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